Stochastic Resonance in Experiment
نویسندگان
چکیده
We observe the phenomenon of stochastic resonance in a semiconductor experiment. Originally, such an effect was predicted for bistable dynamical systems that are influenced by a periodic modulation as well as a random perturbation. In that case, a "resonance" peak can be observed in the power spectrum. The phenomenon investigated is the low-temperature impact ionization breakdown. There, bistability results from the competing states of low and high conductance.
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